New Epitaxial Structures offered by...
(January 30) The epitaxial structures of two junction InGaP/InGaAs solar cells on GaAs substrates and three junction InGaP/InGaAs/Ge solar cells on Ge junctions exhibiting excellent characteristics have been fabricated and subsequently added to the product portfolio of...
The LEDAL Project launch in Nov. 2013
The consortium comprised of the representatives of Epi-Lab, the Institute of Electronic Materials Technology (ITME) and the French company ACERDE will implement the LEDAL Project aimed at developing the manufacturing technology of ultraviolet light emitting diode structures...
Epi-Lab Develops Promising Epitaxial...
Epi-Lab has recently developed the epitaxial structures of 1083 nm DBR lasers on GaAs substrates with InGaAs/AlGaAs quantum wells for the American company Photodigm Inc. They have shown very promising characteristics, with a desirably low threshold current voltage and high...